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| 2SC4499(L)/(S) Silicon NPN Triple Diffused Application High speed and high voltage switching Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SC4499(L)/(S) Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25C. Tj Tstg 1 Ratings 500 400 10 0.5 1.0 0.75 10 150 -55 to +150 Unit V V V A A W C C Electrical Characteristics (Ta = 25C) Item Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current Symbol VCEO(sus) V(BR)EBO I CBO I CEO DC current transfer ratio hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test. VCE(sat) VBE(sat) t on t stg tf Min 400 10 -- -- 12 5 -- -- -- -- -- Typ -- -- -- -- -- -- -- -- -- -- -- Max -- -- 20 50 -- -- 1.0 1.5 1.0 2.0 1.0 V V s s s Unit V V A Test conditions I C = 0.1 A, RBE = L = 100 mH I E = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = VCE = 5 V, IC = 0.25 A*1 VCE = 5 V, IC = 0.5 A*1 I C = 0.25 A, IB = 0.05 A*1 I C = 0.25 A, IB = 0.05 A*1 I C = 0.5 A, IB1 = -IB2 = 0.1 A, VCC 150 V 2 2SC4499(L)/(S) Maximum Collector Dissipation Curve 12 Collector power dissipation PC (W) 10 Area of Safe Operation Collector current IC (A) 1.0 s 25 s ) s 50 ms 5C 0 =2 25 =1 (T C PW tio n era Op 8 0.1 DC 4 0.01 Ta = 25C, 1 Shot 0.001 0 50 100 Case temperature TC (C) 150 1 3 10 30 100 300 1,000 Collector to emitter voltage VCE (V) Transient Thermal Resistance Collector Current Derating Rate Thermal resistance j-c (C/W) 100 Collector current derating rate (%) 10 3 1.0 0.3 0.1 0.03 0.01 0.01 0 50 100 Case temperature TC (C) 150 0.01 TC = 25C 0.1 0.1 Time t 1.0 1.0 10 (s) 10 (ms) s- 10 10 m 10 ms-10 s s 80 IS /B Lim 60 it A re a 40 20 3 2SC4499(L)/(S) Collector to Emitter Voltage vs. Base to Emitter Resistance 600 Collector to emitter voltage VCER (V) IC = 1 mA Reverse Bias Area of Safe Operation 1.0 350 V, 1 A Collector current IC (A) 0.8 500 0.6 0.4 400 V, 0.5 A 400 0.2 IB2 = -0.1 A 450 V, 0.1 A 0 200 300 400 500 100 Collector to emitter voltage VCE (V) 300 100 10 k 100 k 1M 1k Base to emitter resistance RBE () Typical Output Characteristics 0.5 1.0 Typical Transfer Characteristics VCE = 5 V Ta = 25C Collector current IC (A) 0.3 Collector current IC (A) TC = 25C 0.4 50 40 30 0.8 20 10 5 mA 0.6 0.2 0.4 0.1 IB = 0 0 0.2 1 2 3 4 5 Collector to emitter voltage VCE (V) 0 1.2 1.6 2.0 0.4 0.8 Base to emitter voltage VBE (V) 4 2SC4499(L)/(S) DC Current Transfer Ratio vs. Collector Current 100 Collector to emitter saturation voltage VCE(sat) (V) DC current transfer ratio hFE 10 3 1.0 0.3 0.1 IC = 0.05 A 0.03 Ta = 25C 0.01 0.001 0.003 0.01 0.03 0.1 0.3 1.0 Base current IB (A) 0.2 A 0.1 A Collector to Emitter Saturation Voltage vs. Base Current 30 10 3 VCE = 5 V Ta = 25C 1 0.001 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 1.0 Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) Saturation Voltage vs. Collector Current 10 IC = 5 IB 3 Switching time t (s) 1.0 0.3 0.1 0.03 VCE(sat) VBE(sat) 3 1.0 10 Switching Time vs. Collector Current tstg tf 0.3 0.1 0.03 ton Ta = 25C 1.0 VCC = 150 V IC = 5 IB1 = -5 IB2 1.0 0.01 0.001 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 0.01 0.001 0.003 0.01 0.03 0.1 0.3 Collector current IC (A) 5 2SC4499(L)/(S) Switching Time vs. Case Temperature 5 3 Switching time t (s) tstg 1.0 tf ton 0.3 IC = 0.5 A IB1 = - IB2 = 0.1 A RL = 300 VCC = 150 V 0 25 50 75 100 Case temperature TC (C) 125 0.1 0.05 6 Unit: mm 6.5 0.5 5.4 0.5 1.7 0.5 2.3 0.2 0.55 0.1 5.5 0.5 1.2 0.3 3.1 0.5 1.15 0.1 0.8 0.1 16.2 0.5 2.29 0.5 2.29 0.5 0.55 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) DPAK (L)-(1) -- Conforms 0.42 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. This datasheet has been download from: www..com Datasheets for electronics components. |
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